Crystal quality

Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent

Diameter

2inch

3inch

4inch

5inch ～ 7inch

50.8± 0.1mm

76.2±0.2mm

100±0.3mm

In accordance with the provisions of standard production

Thickness

430±15µm

550±15µm

650±20µm

Can be customized by customer

Orientation

C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle

Primary flat length

16.0±1mm

22.0±1.0mm

32.5±1.5 mm

In accordance with the provisions of standard production

Primary flat Orientation

A-plane (1 1-2 0 ) ± 0.2°

TTV

≤10µm

≤15µm

≤20µm

≤30µm

LTV

≤10µm

≤15µm

≤20µm

≤30µm

TIR

≤10µm

≤15µm

≤20µm

≤30µm

BOW

≤10µm

≤15µm

≤20µm

≤30µm

Warp

≤10µm

≤15µm

≤20µm

≤30µm

Front Surface

Epi-Polished (Ra< 0.2nm)

Back Surface

Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)

Note

Can provide high-quality sapphire substrate wafer according to customers' specific requirement

直径

100±0.3

mm

厚度

500

µm

厚度公差

±20

µm

晶向

R面

定向精度

定向精度＜0.08°（5′）

基准边

边长：32.5 ± 1.5

mm

基准边晶向

（0ī11）

---

定向精度＜0.08°（5′）

表面粗糙度

<0.2

nm

翘曲度（Warp）

<20

µm

表面处理

双面抛光

N/A