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CVD-WS2多层薄膜

CVD-WS2多层薄膜 1cm*1cm

货号 规格 数量 价格
Q-0049846 100mg
1
询价
Q-0049846 250mg
1
询价
Q-0049846 500mg
1
询价
Q-0049846 1g
1
询价
Q-0049846 5g
1
询价
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张惠宁销售经理
17778955912
1521565887
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业务范围:AIE材料 | 荧光产品 | MOF产品 | 二维纳米 | 糖化学 | 凝集素 | PEG
如该产品产生售后问题,请联系我们:

1521565887@qq.com

产品介绍

样品照片:

Raman:

This product contains full area coverage WS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick WS2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. Please see the datasets in the product images.

Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage few-layer thick WS2
Electrical properties Indirect gap semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Chemical Vapor Deposition (CVD)
Characterization methods Raman, photoluminescence, TEM, EDS

参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 西安齐岳生物科技有限公司
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